Toshiba Launches Automotive 40V N-Channel Power MOSFETs with New Package that Contributes to High Heat Dissipation and Size Reduction of Automotive Equipment

August 17, 2023 10:30 AM IST | By Businesswire India
Business Wire India

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched two automotive 40V N-channel power MOSFETs, “XPJR6604PB” and “XPJ1R004PB,” that use Toshiba’s new S-TOGL™(Small Transistor Outline Gull-wing Leads) package with U-MOS IX-H process chips. Volume shipments start today.

 

This press release features multimedia. View the full release here: https://www.businesswire.com/news/home/20230816374548/en/

 
Toshiba: automotive 40V N-channel power MOSFETs with new package that contributes to high heat dissipation and size reduction of automotive equipment. (Graphic: Business Wire)

Toshiba: automotive 40V N-channel power MOSFETs with new package that contributes to high heat dissipation and size reduction of automotive equipment. (Graphic: Business Wire)

Safety-critical applications like autonomous driving systems ensure reliability through redundant design, with the result that they integrate more devices and require more mounting space than standard systems. Accordingly, advancing size reductions in automotive equipment requires power MOSFETs that can be mounted at high current densities.

 

XPJR6604PB and XPJ1R004PB use Toshiba’s new S-TOGL™ package (7.0mm×8.44mm[1]) which features a post-less structure unifying the source connective part and outer leads. A multi-pin structure for the source leads decreases package resistance.

 

The combination of the S-TOGL™ package and Toshiba's U-MOS IX-H process achieve a significant On-resistance reduction of 11% against Toshiba's TO-220SM (W) package product[2], which has the same thermal resistance characteristics. The new package also cuts the required mounting area by approximately 55% against the TO-220SM(W) package. On top of this, the 200A drain current rating of the new package is higher than Toshiba’s similarly sized DPAK + package (6.5mm×9.5mm[1]), enabling high current flow. Overall, the S-TOGL™ package realizes high-density and compact layouts, reduces the size of automotive equipment, and contributes to high heat dissipation.

 

Since automotive equipment is used in extreme temperature environments, the reliability of surface mounting solder joints is a critical consideration. The S-TOGL™ package uses gull-wing leads that reduce mounting stress, improving the reliability of the solder joint.

 

Assuming that multiple devices will be connected in parallel for applications requiring higher-current operation, Toshiba supports grouping shipment[3] for the new products, in which the gate threshold voltage is used for grouping. This allows designs using product groups with small characteristic variation.

 

Toshiba will continue to expand its product line-up of power semiconductor products and contribute to the realization of carbon neutrality with more user-friendly, high-performance power devices.

 

Applications

 
  • Automotive equipment: inverters, semiconductor relays, load switches, motor drives, etc.
     

Features

 
  • New S-TOGL™package: 7.0mm×8.44mm (typ.)
  • Large drain current rating:
     

XPJR6604PB: ID=200A
XPJ1R004PB: ID=160A

 
  • AEC-Q101 qualified
  • IATF 16949/PPAP available[4]
  • Low On-resistance :
     

XPJR6604PB: RDS(ON)=0.53mΩ (typ.) (VGS=10V)
XPJ1R004PB: RDS(ON)=0.8mΩ (typ.) (VGS=10V)

 

Notes:

 

[1] Typical package size, including leads.
[2] TKR74F04PB housed in a TO-220SM (W) package.
[3] Toshiba can offer grouping shipment, in which the gate threshold voltage range is 0.4V for each reel. However, specifying a specific group is not possible. Please contact Toshiba sales representatives for more details.
[4] Please contact Toshiba sales representatives for more details.

 

Main Specifications

 

 

New Products

Current Products

Part number

XPJR6604PB

XPJ1R004PB

TKR74F04PB

TK1R4S04PB

Polarity

N-channel

Series

U-MOS IX-H

Package

Name

S-TOGL™

TO-220SM(W)

DPAK+

Size (mm)

typ.

7.0×8.44, t=2.3

10.0×13.0, t=3.5

6.5×9.5, t=2.3

Absolute maximum ratings

Drain-source voltage VDSS (V)

40

Drain current (DC) ID (A)

200

160

250

120

Drain current (pulsed) IDP (A)

600

480

750

240

Channel temperature Tch (°C)

175

Electric characteristics

Drain-source On-resistance

 

RDS(ON) (mΩ)

VGS=10V

max

0.66

1.0

0.74

1.35

Channel-to-case thermal impedance

 

Zth(ch-c) (°C/W)

Tc=25°C

max

0.4

0.67

0.4

0.83

Follow the links below for more on the new products.

 

XPJR6604PB
XPJ1R004PB

 

Follow the link below for more on Toshiba Automotive MOSFETs.
Automotive MOSFETs

 

* S-TOGL™ is a trademark of Toshiba Electronic Devices & Storage Corporation.
* Other company names, product names, and service names may be trademarks of their respective companies.
* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

 

About Toshiba Electronic Devices & Storage Corporation

 

Toshiba Electronic Devices & Storage Corporation, a leading supplier of advanced semiconductor and storage solutions, draws on over half a century of experience and innovation to offer customers and business partners outstanding discrete semiconductors, system LSIs and HDD products.
The company's 21,500 employees around the world share a determination to maximize product value, and promote close collaboration with customers in the co-creation of value and new markets. With annual sales approaching 800-billion yen (US$6.1 billion), Toshiba Electronic Devices & Storage Corporation looks forward to building and to contributing to a better future for people everywhere.
Find out more at https://toshiba.semicon-storage.com/ap-en/top.html

 

 

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Section 1.10.32 of "de Finibus Bonorum et Malorum", written by Cicero in 45 BC

"Sed ut perspiciatis unde omnis iste natus error sit voluptatem accusantium doloremque laudantium, totam rem aperiam, eaque ipsa quae ab illo inventore veritatis et quasi architecto beatae vitae dicta sunt explicabo. Nemo enim ipsam voluptatem quia voluptas sit aspernatur aut odit aut fugit, sed quia consequuntur magni dolores eos qui ratione voluptatem sequi nesciunt. Neque porro quisquam est, qui dolorem ipsum quia dolor sit amet, consectetur, adipisci velit, sed quia non numquam eius modi tempora incidunt ut labore et dolore magnam aliquam quaerat voluptatem. Ut enim ad minima veniam, quis nostrum exercitationem ullam corporis suscipit laboriosam, nisi ut aliquid ex ea commodi consequatur? Quis autem vel eum iure reprehenderit qui in ea voluptate velit esse quam nihil molestiae consequatur, vel illum qui dolorem eum fugiat quo voluptas nulla pariatur?"

1914 translation by H. Rackham

"But I must explain to you how all this mistaken idea of denouncing pleasure and praising pain was born and I will give you a complete account of the system, and expound the actual teachings of the great explorer of the truth, the master-builder of human happiness. No one rejects, dislikes, or avoids pleasure itself, because it is pleasure, but because those who do not know how to pursue pleasure rationally encounter consequences that are extremely painful. Nor again is there anyone who loves or pursues or desires to obtain pain of itself, because it is pain, but because occasionally circumstances occur in which toil and pain can procure him some great pleasure. To take a trivial example, which of us ever undertakes laborious physical exercise, except to obtain some advantage from it? But who has any right to find fault with a man who chooses to enjoy a pleasure that has no annoying consequences, or one who avoids a pain that produces no resultant pleasure?"

1914 translation by H. Rackham

"But I must explain to you how all this mistaken idea of denouncing pleasure and praising pain was born and I will give you a complete account of the system, and expound the actual teachings of the great explorer of the truth, the master-builder of human happiness. No one rejects, dislikes, or avoids pleasure itself, because it is pleasure, but because those who do not know how to pursue pleasure rationally encounter consequences that are extremely painful. Nor again is there anyone who loves or pursues or desires to obtain pain of itself, because it is pain, but because occasionally circumstances occur in which toil and pain can procure him some great pleasure. To take a trivial example, which of us ever undertakes laborious physical exercise, except to obtain some advantage from it? But who has any right to find fault with a man who chooses to enjoy a pleasure that has no annoying consequences, or one who avoids a pain that produces no resultant pleasure?"

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