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Nexperia (NASDAQ: NXPI), a leading semiconductor manufacturer, has announced a significant investment of USD 200 million (approximately 184 million Euros) to develop next-generation wide bandgap semiconductors (WBG), including silicon carbide (SiC) and gallium nitride (GaN). This investment will also enhance production infrastructure at its Hamburg site. The announcement, made in collaboration with Hamburg’s Minister for Economic Affairs, Dr. Melanie Leonhard, coincides with the 100-year anniversary of the production site.
Expanding Capabilities to Meet Growing Demand
To address the increasing long-term demand for efficient power semiconductors, Nexperia will develop and produce SiC, GaN, and traditional silicon (Si) technologies in Germany starting in June 2024. These advancements are crucial for supporting key technologies in electrification and digitalization. SiC and GaN semiconductors, in particular, are essential for power-hungry applications such as data centers, renewable energy solutions, and electromobility, contributing significantly to decarbonization efforts.
New Production Lines and Technological Milestones
The first production lines for high-voltage GaN D-Mode transistors and SiC diodes commenced in June 2024. The next major development will be the introduction of modern and cost-efficient 200 mm production lines for SiC MOSFETs and low-voltage GaN HEMTs at the Hamburg facility over the next two years. Additionally, the investment will further automate the existing infrastructure and expand silicon production capacity by converting to 200 mm wafers. New R&D laboratories will also be established to ensure a smooth transition from research to production.
Boosting Local Economy and Job Creation
Beyond technological advancements, Nexperia’s initiative is expected to stimulate local economic development. The investment is a significant contribution to securing and creating jobs, as well as enhancing the European Union's semiconductor self-sufficiency. Nexperia is committed to fostering a robust research and development ecosystem in Hamburg and across Europe, working closely with universities and research institutes. These collaborations ensure continuous innovation and technological excellence in Nexperia’s products.
Collaborations and Continuous Innovation
Nexperia's partnerships, such as those within the Industrial Affiliation Program (IIAP) of the nanoelectronics research center imec, play a vital role in advancing GaN technology. These collaborations promote the exchange of expertise and the training of highly qualified employees, ensuring that Nexperia remains at the forefront of semiconductor innovation.
